FLK057XV Datasheet, Eudyna Devices

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* High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Drain Drain DESCRIPT.

in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assuranc.

The FLK057XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability .